 |  | | |
| PartNumber | SIR878DP-T1-GE3 | SIR878DP | SIR878DP-T1-GS3 |
| Description | MOSFET RECOMMENDED ALT 78-SIR878BDP-T1-RE3 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 11.4 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 43 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 44.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIR | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 34 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | SIR878DP-GE3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR878DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIR878BDP-T1-RE3 | |
| SIR878DP | ブランドニューオリジナル | ||
| SIR878DP-T1-GS3 | ブランドニューオリジナル | ||
Vishay |
SIR878DP-T1-GE3 | MOSFET N-CH 100V 40A PPAK SO-8 |