 | | |
| PartNumber | SIRC06DP-T1-GE3 | SIRC04DP-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 60 A | 60 A |
| Rds On Drain Source Resistance | 4 mOhms | 3.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 2.1 V |
| Vgs Gate Source Voltage | 4.5 V | - 16 V, 20 V |
| Qg Gate Charge | 38.5 nC | 16.6 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 50 W | 50 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel |
| Series | SIR | SIR |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 8 ns | 9 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 14 ns | 55 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 23 ns | 25 ns |
| Typical Turn On Delay Time | 12 ns | 30 ns |
| Forward Transconductance Min | - | 140 S |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIRC06DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | |
| SIRC04DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
Vishay |
SIRC06DP-T1-GE3 | MOSFET N-CH 30V | |
| SIRC04DP-T1-GE3 | MOSFET N-CH 30V 60A POWERPAKSO-8 | ||
| SIRC04DP | ブランドニューオリジナル | ||
| SIRC0501 | ブランドニューオリジナル |