 |  |  | |
| PartNumber | SIRC10DP-T1-GE3 | SIRC100S | SIRC16DP-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET N-CH 25V 60A POWERPAKSO-8 | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 60 A | - | - |
| Rds On Drain Source Resistance | 3.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.4 V | - | - |
| Vgs Gate Source Voltage | 20 V, - 16 V | - | - |
| Qg Gate Charge | 24 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 43 W | - | - |
| Configuration | Single | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Series | SIR | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.017870 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIRC18DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | |
| SIRC10DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SIRC100S | ブランドニューオリジナル | ||
Vishay |
SIRC10DP-T1-GE3 | MOSFET N-CH 30V 60A POWERPAKSO-8 | |
| SIRC16DP-T1-GE3 | MOSFET N-CH 25V 60A POWERPAKSO-8 | ||
| SIRC18DP-T1-GE3 | N-Channel 30 V (D-S) MOSFET with Schottky Diode |