 | | | |
| PartNumber | SIS434DN-T1-GE3 | SIS435DNT-T1-GE3 | SIS436DN-T1-GE3 |
| Description | MOSFET 40V Vds 20V Vgs PowerPAK 1212-8 | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T | MOSFET RECOMMENDED ALT 781-SI7716ADN-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 20 V | - |
| Id Continuous Drain Current | 35 A | 30 A | - |
| Rds On Drain Source Resistance | 6.3 mOhms | 4.4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 900 mV | - |
| Vgs Gate Source Voltage | 20 V | 8 V | - |
| Qg Gate Charge | 40 nC | 180 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 52 W | 39 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | SIS | SIS | SIS |
| Transistor Type | 1 N-Channel | 1 P-Channel | - |
| Width | 3.3 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 60 S | 55 S | - |
| Fall Time | 12 ns | 30 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 15 ns | 30 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 100 ns | - |
| Typical Turn On Delay Time | 20 ns | 40 ns | - |
| Part # Aliases | SIS434DN-GE3 | - | SIS436DN-GE3 |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIS434DN-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK 1212-8 | |
| SIS435DNT-T1-GE3 | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T | ||
| SIS438DN-T1-GE3 | MOSFET 20V Vds 20V Vgs PowerPAK 1212-8 | ||
| SIS439DNT-T1-GE3 | MOSFET RECOMMENDED ALT 78-SISH402DN-T1-GE3 | ||
| SIS436DN-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI7716ADN-T1-GE3 | ||
Vishay |
SIS439DNT-T1-GE3 | RF Bipolar Transistors MOSFET -30V 11mOhm@-10V -50A P-CH | |
| SIS430DN-T1-GE3 | MOSFET N-CH 25V 35A PPAK 1212-8 | ||
| SIS434DN-T1-GE3 | MOSFET N-CH 40V 35A PPAK 1212-8 | ||
| SIS435DNT-T1-GE3 | MOSFET P-CH 20V 30A 1212-8 | ||
| SIS436DN-T1-GE3 | MOSFET N-CH 25V 16A PPAK 1212-8 | ||
| SIS438DN-T1-GE3 | MOSFET N-CH 20V 16A PPAK 1212-8 | ||
| SIS430DN | ブランドニューオリジナル | ||
| SIS430DN-GE3 | ブランドニューオリジナル | ||
| SIS434DN | ブランドニューオリジナル | ||
| SIS435DNT | ブランドニューオリジナル | ||
| SIS438DN | ブランドニューオリジナル | ||
| SIS439DNT-T1-E3 | ブランドニューオリジナル |