SIS892

SIS892ADN-T1-GE3 vs SIS892DN-T1-GE3 vs SIS892ADN

 
PartNumberSIS892ADN-T1-GE3SIS892DN-T1-GE3SIS892ADN
DescriptionMOSFET 100V Vds 20V Vgs PowerPAK 1212-8MOSFET 100V 30A 43W 29 mohms @ 10V
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-1212-8PowerPAK-1212-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current28 A30 A-
Rds On Drain Source Resistance27 mOhms29 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.2 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge19.5 nC14.2 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation52 W52 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
Height1.04 mm--
Length3.3 mm--
SeriesSISSIS-
Transistor Type1 N-Channel1 N-Channel-
Width3.3 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min19 S22 S-
Fall Time9 ns9 ns-
Product TypeMOSFETMOSFET-
Rise Time13 ns11 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time16 ns21 ns-
Typical Turn On Delay Time10 ns8 ns-
Part # AliasesSIS892ADN-GE3SIS892DN-GE3-
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SIS892ADN-T1-GE3 MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
SIS892DN-T1-GE3 MOSFET 100V 30A 43W 29 mohms @ 10V
SIS892ADN ブランドニューオリジナル
SIS892DN-T1-GE3/S892 ブランドニューオリジナル
Vishay
Vishay
SIS892ADN-T1-GE3 MOSFET N-CH 100V 28A PPAK 1212
SIS892DN-T1-GE3 MOSFET N-CH 100V 30A 1212-8 PPAK
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