SISF

SISF02DN-T1-GE3 vs SISF20DN-T1-GE3 vs SISF00DN-T1-GE3

 
PartNumberSISF02DN-T1-GE3SISF20DN-T1-GE3SISF00DN-T1-GE3
DescriptionMOSFET Common Drain Dual N-Channel 25 V (S1-S2) MOSFETMOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8SCDMOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-1212-8PowerPAK 1212-8SCDPowerPAK-1212-8SCD-8
Number of Channels1 Channel2 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V60 V30 V
Id Continuous Drain Current40 A20 A60 A
Rds On Drain Source Resistance2.15 mOhms13 Ohms4.2 mOhms
Vgs th Gate Source Threshold Voltage1.1 V3 V2.1 V
Vgs Gate Source Voltage- 16 V, 20 V20 V- 16 V, 20 V
Qg Gate Charge51 nC22 nC53 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation52 W-69.4 W
ConfigurationSingleDualDual
Channel ModeEnhancementEnhancementEnhancement
TradenamePowerPAK-TrenchFET, PowerPAK
PackagingReelReelReel
Transistor Type1 N-Channel-2 N-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min105 S-130 S
Fall Time10 ns5 ns10 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time17 ns5 ns32 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time25 ns19 ns22 ns
Typical Turn On Delay Time24 ns10 ns10 ns
Series--SIS
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SISF02DN-T1-GE3 MOSFET Common Drain Dual N-Channel 25 V (S1-S2) MOSFET
SISF20DN-T1-GE3 MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8SCD
SISF00DN-T1-GE3 MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
Vishay
Vishay
SISF00DN-T1-GE3 MOSFET DUAL N-CH 30V POWERPAK 12
SISF20DN-T1-GE3 MOSFET DL N-CH 60V PPK 1212-8SCD
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