| PartNumber | SISS05DN-T1-GE3 | SISS04DN-T1-GE3 | SISS02DN-T1-GE3 |
| Description | MOSFET P-Channel 30 V (D-S) MOSFET | MOSFET 30V Vds 16V Vgs PowerPAK 1212-8S | MOSFET 25V Vds 16V Vgs PowerPAK 1212-8S |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 25 V |
| Id Continuous Drain Current | 108 A | 80 A | 80 A |
| Rds On Drain Source Resistance | 5.8 mOhms | 1.2 mOhms | 1.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | - 20 V, + 16 V | 16 V, - 12 V | 16 V, - 12 V |
| Qg Gate Charge | 76 nC | 93 nC | 83 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 65.7 W | 65.7 W | 65.7 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 13 ns | 10 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 15 ns | 21 ns | 23 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 47 ns | 26 ns | 24 ns |
| Typical Turn On Delay Time | 16 ns | 12 ns | 14 ns |
| Series | - | SIS | SIS |
| Forward Transconductance Min | - | 95 S | 94 S |