 |  | |
| PartNumber | SP8K5FU6TB | SP8K5FU7TB |
| Description | MOSFET 30V 3.5A N-CHAN DUAL | |
| Manufacturer | Rohm Semiconductor | - |
| Product Category | FETs - Arrays | - |
| Series | - | - |
| Packaging | Tape & Reel (TR) | - |
| Unit Weight | 0.030018 oz | - |
| Mounting Style | SMD/SMT | - |
| Package Case | 8-SOIC (0.154", 3.90mm Width) | - |
| Technology | Si | - |
| Operating Temperature | 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Number of Channels | 2 Channel | - |
| Supplier Device Package | 8-SOP | - |
| Configuration | Dual Dual Drain | - |
| FET Type | 2 N-Channel (Dual) | - |
| Power Max | 2W | - |
| Transistor Type | 2 N-Channel | - |
| Drain to Source Voltage Vdss | 30V | - |
| Input Capacitance Ciss Vds | 140pF @ 10V | - |
| FET Feature | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | 3.5A | - |
| Rds On Max Id Vgs | 83 mOhm @ 3.5A, 10V | - |
| Vgs th Max Id | 2.5V @ 1mA | - |
| Gate Charge Qg Vgs | 3.5nC @ 5V | - |
| Pd Power Dissipation | 2 W | - |
| Maximum Operating Temperature | + 150 C | - |
| Minimum Operating Temperature | - 55 C | - |
| Fall Time | 4 ns | - |
| Rise Time | 6 ns | - |
| Vgs Gate Source Voltage | 20 V | - |
| Id Continuous Drain Current | 3.5 A | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Rds On Drain Source Resistance | 83 mOhms | - |
| Transistor Polarity | N-Channel | - |
| Typical Turn Off Delay Time | 17 ns | - |
| Typical Turn On Delay Time | 6 ns | - |
| Channel Mode | Enhancement | - |