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| PartNumber | SPB10N10L G | SPB10N10L | SPB10N10LG |
| Description | MOSFET N-Ch 100V 10.3A D2PAK-2 | MOSFET N-CH 100V 10.3A D2PAK | Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| Manufacturer | Infineon | INF | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 10.3 A | - | - |
| Rds On Drain Source Resistance | 154 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 50 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 17.8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 19.1 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27.8 ns | - | - |
| Typical Turn On Delay Time | 4.6 ns | - | - |
| Part # Aliases | SPB10N10LGXT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
SPB10N10L G | MOSFET N-Ch 100V 10.3A D2PAK-2 | |
Infineon Technologies |
SPB10N10L | MOSFET N-CH 100V 10.3A D2PAK | |
| SPB10N10L G | MOSFET N-CH 100V 10.3A TO-263 | ||
| SPB10N10LG | Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |