 |  | | |
| PartNumber | SPU01N60C3BKMA1 | SPU01N60C3 | SPU01N60C3,01N60C3 |
| Description | MOSFET LOW POWER_LEGACY | Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-251-3 | - | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Tube | Tube | - |
| Height | 6.22 mm | - | - |
| Length | 6.73 mm | - | - |
| Width | 2.38 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP000012110 SPU01N60C3BKMA1 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Series | - | CoolMOS C3 | - |
| Part Aliases | - | SP000012110 SPU01N60C3BKMA1 SPU01N60C3XK | - |
| Package Case | - | IPAK-3 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 11 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 30 ns | - |
| Rise Time | - | 25 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 800 mA | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Rds On Drain Source Resistance | - | 6 Ohms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 55 ns | - |
| Typical Turn On Delay Time | - | 30 ns | - |
| Channel Mode | - | Enhancement | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
SPU01N60C3BKMA1 | MOSFET LOW POWER_LEGACY | |
| SPU01N60C3 | Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | ||
| SPU01N60C3,01N60C3 | ブランドニューオリジナル | ||
Infineon Technologies |
SPU01N60C3BKMA1 | MOSFET N-CH 650V 0.8A TO-251 |