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| PartNumber | SQ2301ES-T1-E3 | SQ2301ES-T1-GE3 | SQ2301ES-T1_GE3 |
| Description | P-CHANNEL 20-V (D-S) 175C MOSF | MOSFET P-CH 20V 3.9A TO236 | |
| Manufacturer | - | - | Vishay / Siliconix |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | SQ Series |
| Packaging | - | - | Reel |
| Unit Weight | - | - | 0.050717 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | TrenchFET |
| Package Case | - | - | SOT-23-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Pd Power Dissipation | - | - | 3 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 9 ns |
| Rise Time | - | - | 14 ns |
| Vgs Gate Source Voltage | - | - | 8 V |
| Id Continuous Drain Current | - | - | - 3.9 A |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 450 mV |
| Rds On Drain Source Resistance | - | - | 180 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 30 ns |
| Typical Turn On Delay Time | - | - | 15 ns |
| Qg Gate Charge | - | - | 8 nC |
| Forward Transconductance Min | - | - | 7 S |
| Channel Mode | - | - | Enhancement |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| SQ2301ES-T1-E3 | ブランドニューオリジナル | ||
| SQ2301ES-T1-GE3 | P-CHANNEL 20-V (D-S) 175C MOSF | ||
Vishay |
SQ2301ES-T1_GE3 | MOSFET P-CH 20V 3.9A TO236 |