 | |  | |
| PartNumber | SQ3426AEEV-T1_GE3 | SQ3425EV-T1_GE3 | SQ3426EV-T1_GE3 |
| Description | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | MOSFET P Ch -20Vds 12Vgs AEC-Q101 Qualified | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | TSOP-6 | TSOP-6 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 20 V | 60 V |
| Id Continuous Drain Current | 7 A | 7.4 A | 7 A |
| Rds On Drain Source Resistance | 32 mOhms | 49 mOhms | 32 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.4 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 12 V | 20 V |
| Qg Gate Charge | 14 nC | 10.3 nC | 12 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 5 W | 5 W | 5 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 P-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 21 S | 9 S | 21 S |
| Fall Time | 4 ns | 28 ns | 7 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 26 ns | 12 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | 41 ns | 19 ns |
| Typical Turn On Delay Time | 7 ns | 11 ns | 9 ns |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ3427AEEV-T1_GE3 | MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified | |
| SQ3426AEEV-T1_GE3 | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | ||
| SQ3427EV-T1_GE3 | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | ||
| SQ3425EV-T1_GE3 | MOSFET P Ch -20Vds 12Vgs AEC-Q101 Qualified | ||
| SQ3426EV-T1_GE3 | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | ||
Vishay |
SQ3427EEV-T1-GE3 | IGBT Transistors MOSFET 60V 5.5A 5W P-Ch Automotive | |
| SQ3426AEEV-T1_GE3 | MOSFET N-CH 60V 7A 6TSOP | ||
| SQ3425EV-T1_GE3 | MOSFET P-CHANNEL 20V 7.4A 6TSOP | ||
| SQ3426EEV-T1-GE3 | MOSFET N-CH 60V 7A 6TSOP | ||
| SQ3427AEEV-T1_GE3 | MOSFET P-CH 60V 6TSOP | ||
| SQ3427EV-T1_GE3 | MOSFET P-CH 60V 6TSOP | ||
| SQ3427AEEV-T1_GE3-CUT TAPE | ブランドニューオリジナル | ||
| SQ3427EV-T1_GE3-CUT TAPE | ブランドニューオリジナル | ||
| SQ3425EV-T1-GE3 | ブランドニューオリジナル | ||
| SQ3426EEV | ブランドニューオリジナル | ||
| SQ3426EEVT1GE3 | ブランドニューオリジナル | ||
| SQ3427EEV | ブランドニューオリジナル | ||
| SQ3427EEV-T1-E3 | ブランドニューオリジナル | ||
| SQ3427EV | ブランドニューオリジナル | ||
| SQ3427EV-T1-GE3 | ブランドニューオリジナル |