SQ4920EY-T1_G

SQ4920EY-T1_GE3 vs SQ4920EY-T1-GE3 vs SQ4920EY-T1-GE3-CUT TAPE

 
PartNumberSQ4920EY-T1_GE3SQ4920EY-T1-GE3SQ4920EY-T1-GE3-CUT TAPE
DescriptionMOSFET 30V 8A 4.4W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQ4920EY-T1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance13 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge30 nC, 30 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation4.4 W--
ConfigurationDual--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
SeriesSQSQ-
Transistor Type2 N-Channel--
Width3.9 mm3.9 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min43 S, 43 S--
Fall Time8 ns, 8 ns--
Product TypeMOSFETMOSFET-
Rise Time10 ns, 10 ns--
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time25 ns, 25 ns--
Typical Turn On Delay Time7 ns, 7 ns--
Unit Weight0.017870 oz0.017870 oz-
Part # Aliases-SQ4920EY-GE3-
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ4920EY-T1_GE3 MOSFET 30V 8A 4.4W AEC-Q101 Qualified
SQ4920EY-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ4920EY-T1_GE3
SQ4920EY-T1-GE3-CUT TAPE ブランドニューオリジナル
SQ4920EY-T1-GE3 MOSFET 30V 8A 4.4W
Vishay
Vishay
SQ4920EY-T1_GE3 MOSFET 2N-CH 30V 8A 8SO
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