OMO ElectronicOMO Electronic
Expand menu
0 ショッピングカート

SQD100N03-3M

SQD100N03-3M2L_GE3 vs SQD100N03-3M2L-GE3 vs SQD100N03-3M2L

 
PartNumberSQD100N03-3M2L_GE3SQD100N03-3M2L-GE3SQD100N03-3M2L
DescriptionMOSFET 30V 100A 136W N-Channel MOSFETIGBT Transistors MOSFET 30V 100A 136W
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance2.7 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge116 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation136 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height2.38 mm--
Length6.73 mm--
SeriesSQ--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandVishay / Siliconix--
Forward Transconductance Min122 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time42 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.050717 oz--
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix 		SQD100N03-3M4_GE3 MOSFET 30V 100A 136W N-Channel MOSFET
SQD100N03-3M2L_GE3 MOSFET 30V 100A 136W N-Channel MOSFET
SQD100N03-3M2L-GE3 IGBT Transistors MOSFET 30V 100A 136W
SQD100N03-3M2L ブランドニューオリジナル
SQD100N03-3M4 ブランドニューオリジナル
Vishay
Vishay 		SQD100N03-3M2L_GE3 MOSFET N-CH 30V 100A TO252AA
SQD100N03-3M4_GE3 MOSFET N-CH 30V 100A TO252AA
Top