 | | | |
| PartNumber | SQD25N06-22L_T4GE3 | SQD25N06-22L_GE3 | SQD25N15-52-GE3 |
| Description | MOSFET 60V 25A 62W AEC-Q101 Qualified | MOSFET 60V 25A 62W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 781-SQD25N15-52_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 25 A | 25 A | - |
| Rds On Drain Source Resistance | 18 mOhms | 18 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 50 nC | 50 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 62 W | 62 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 2.38 mm | 2.38 mm | 2.38 mm |
| Length | 6.73 mm | 6.73 mm | 6.73 mm |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 32 S | 32 S | - |
| Fall Time | 6 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 2500 | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 24 ns | 24 ns | - |
| Typical Turn On Delay Time | 8 ns | 8 ns | - |
| Unit Weight | 0.011993 oz | 0.002822 oz | 0.050717 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD25N15-52_GE3 | MOSFET 150V 25A 136W AEC-Q101 Qualified | |
| SQD25N06-22L_T4GE3 | MOSFET 60V 25A 62W AEC-Q101 Qualified | ||
| SQD25N06-22L_GE3 | MOSFET 60V 25A 62W AEC-Q101 Qualified | ||
| SQD25N15-52-T4_GE3 | MOSFET 150V Vds 20V Vgs TO-252 | ||
| SQD25N15-52-GE3 | MOSFET RECOMMENDED ALT 781-SQD25N15-52_GE3 | ||
| SQD25N15-52-GE3 | RF Bipolar Transistors MOSFET 150V 25A 136W 5.2mohm @ 10V | ||
| SQD25N06-22L-T4GE3 | RF Bipolar Transistors MOSFET 60V 25A 62W | ||
| SQD25N06-22L_GE3-CUT TAPE | ブランドニューオリジナル | ||
| SQD25N06-22L | ブランドニューオリジナル | ||
| SQD25N06-22L-GE3 | MOSFET 60V 25A 62W N-Ch Automotive | ||
| SQD25N06-35L-GE3 | MOSFET RECOMMENDED ALT 78-SQD25N06-22LT4GE | ||
| SQD25N0622LGE3 | Power Field-Effect Transistor, 25A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| SQD25N15-52 | ブランドニューオリジナル | ||
| SQD25N15-52-E3 | ブランドニューオリジナル | ||
Vishay |
SQD25N15-52_GE3 | MOSFET N-CH 150V 25A TO252 | |
| SQD25N06-22L_GE3 | MOSFET N-CH 60V 25A TO252 |