SQD25N06-22L

SQD25N06-22L_GE3 vs SQD25N06-22L-T4GE3 vs SQD25N06-22L

 
PartNumberSQD25N06-22L_GE3SQD25N06-22L-T4GE3SQD25N06-22L
DescriptionMOSFET 60V 25A 62W AEC-Q101 QualifiedRF Bipolar Transistors MOSFET 60V 25A 62W
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current25 A--
Rds On Drain Source Resistance18 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge50 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation62 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height2.38 mm--
Length6.73 mm--
SeriesSQ--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandVishay / Siliconix--
Forward Transconductance Min32 S--
Fall Time6 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.002822 oz--
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQD25N06-22L_T4GE3 MOSFET 60V 25A 62W AEC-Q101 Qualified
SQD25N06-22L_GE3 MOSFET 60V 25A 62W AEC-Q101 Qualified
SQD25N06-22L-T4GE3 RF Bipolar Transistors MOSFET 60V 25A 62W
SQD25N06-22L_GE3-CUT TAPE ブランドニューオリジナル
SQD25N06-22L ブランドニューオリジナル
SQD25N06-22L-GE3 MOSFET 60V 25A 62W N-Ch Automotive
Vishay
Vishay
SQD25N06-22L_GE3 MOSFET N-CH 60V 25A TO252
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