SQD90

SQD90P04-9m4L_GE3 vs SQD90P04-9M4L-GE3 vs SQD90P04-9M4L

 
PartNumberSQD90P04-9m4L_GE3SQD90P04-9M4L-GE3SQD90P04-9M4L
DescriptionMOSFET P-Channel 40V AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQD90P04-9M4L_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance7.5 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge155 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation136 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type1 P-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min46 S--
Fall Time19 ns--
Product TypeMOSFETMOSFET-
Rise Time15 ns--
Factory Pack Quantity20002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time61 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.011993 oz0.050717 oz-
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQD90P04-9m4L_GE3 MOSFET P-Channel 40V AEC-Q101 Qualified
SQD90P04_9M4LT4GE3 MOSFET -40V Vds 20V Vgs TO-252
SQD90P04-9M4L-GE3 MOSFET RECOMMENDED ALT 78-SQD90P04-9M4L_GE3
SQD90P04-9M4L ブランドニューオリジナル
SQD90P04-9M4L-GE3 ブランドニューオリジナル
Vishay
Vishay
SQD90P04-9M4L_GE3 MOSFET P-CH 40V 90A TO252AA
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