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| PartNumber | SQD97N06-6m3L_GE3 | SQD97N06-6M3L-GE3 | SQD97N06-6M3L |
| Description | MOSFET 60V 97A 136W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQD97N06-6M3L_GE3 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 97 A | - | - |
| Rds On Drain Source Resistance | 5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 125 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SQ | SQ | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 177 S | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 2000 | 2000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 41 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Unit Weight | 0.011993 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD97N06-6m3L_GE3 | MOSFET 60V 97A 136W AEC-Q101 Qualified | |
| SQD97N06-6M3L-GE3 | MOSFET RECOMMENDED ALT 78-SQD97N06-6M3L_GE3 | ||
| SQD97N06-6M3L-GE3 | RF Bipolar Transistors MOSFET 60V 97A 136W | ||
| SQD97N06-6M3L | ブランドニューオリジナル | ||
Vishay |
SQD97N06-6M3L_GE3 | MOSFET N-CH 60V 50A TO252 |