| PartNumber | SQM120P06-07L_GE3 | SQM120P04-04L_GE3 | SQM120P06-07L-GE3 |
| Description | MOSFET 60 V 120A 375 W AEC-Q101 Qualified | MOSFET P-Channel 40V AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQM120P06-07L_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 40 V | - |
| Id Continuous Drain Current | 120 A | 120 A | - |
| Rds On Drain Source Resistance | 6.7 mOhms | 3.4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 180 nC | 330 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 375 W | 375 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 90 S | 97 S | - |
| Fall Time | 32 ns | 45 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 23 ns | 15 ns | - |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 97 ns | 112 ns | - |
| Typical Turn On Delay Time | 15 ns | 17 ns | - |
| Unit Weight | 0.068654 oz | 0.077603 oz | 0.068654 oz |
| Part # Aliases | - | - | SQM110P06-07L-GE3 |