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| PartNumber | SQM40N10-30_GE3 | SQM40N15-38_GE3 | SQM40N10-30-GE3 |
| Description | MOSFET 100V 40A 107W AEC-Q101 Qualified | MOSFET 150V 40A 166W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 781-SQM40N10-30_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 150 V | - |
| Id Continuous Drain Current | 40 A | 40 A | - |
| Rds On Drain Source Resistance | 23 mOhms | 27 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 62 nC | 70 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 107 W | 166 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 52 S | 40 S | - |
| Fall Time | 5 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | 17 ns | - |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 23 ns | 24 ns | - |
| Typical Turn On Delay Time | 12 ns | 14 ns | - |
| Unit Weight | 0.050717 oz | 0.050717 oz | 0.050717 oz |
| Height | - | - | 4.83 mm |
| Length | - | - | 10.67 mm |
| Width | - | - | 9.65 mm |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQM40N10-30_GE3 | MOSFET 100V 40A 107W AEC-Q101 Qualified | |
| SQM40N15-38_GE3 | MOSFET 150V 40A 166W AEC-Q101 Qualified | ||
| SQM40N10-30-GE3 | MOSFET RECOMMENDED ALT 781-SQM40N10-30_GE3 | ||
| SQM40N10-30-GE3 | RF Bipolar Transistors MOSFET 100V 40A 107W 30mohm @ 10V | ||
| SQM40N15-38-GE3 | RF Bipolar Transistors MOSFET 150V 40A 166W N-Ch Automotive | ||
| SQM40N10-30 | ブランドニューオリジナル | ||
| SQM40N15-38 | ブランドニューオリジナル | ||
| SQM40N1538GE3 | Power Field-Effect Transistor, 40A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
Vishay |
SQM40N15-38_GE3 | MOSFET N-CH 150V 40A TO263 | |
| SQM40N10-30_GE3 | MOSFET N-CH 100V 40A TO263 |