| PartNumber | SQM50P06-15L_GE3 | SQM50P03-07_GE3 | SQM50P03-07-GE3 |
| Description | MOSFET P-Channel 60V AEC-Q101 Qualified | MOSFET P-Channel 30V AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQM50P03-07_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 30 V | - |
| Id Continuous Drain Current | 50 A | 50 A | - |
| Rds On Drain Source Resistance | 13 mOhms | 5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 155 nC | 155 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 150 W | 150 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 46 S | 62 S | - |
| Fall Time | 16 ns | 26 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 63 ns | - |
| Typical Turn On Delay Time | 13 ns | 11 ns | - |
| Unit Weight | 0.077603 oz | 0.077603 oz | 0.068654 oz |
| Packaging | - | - | Reel |
| Height | - | - | 4.83 mm |
| Length | - | - | 10.67 mm |
| Width | - | - | 9.65 mm |