![]() | ![]() | ![]() | |
| PartNumber | SSM3J113TU(TE85L) | SSM3J113TU | SSM3J113TU(T5LT) |
| Description | IGBT Transistors MOSFET Vds=-20V Id=-1.7A 3Pin | MOSFET | |
| Manufacturer | TOSHIBA | TOSHIBA | - |
| Product Category | IC Chips | IC Chips | - |
| Packaging | Reel | Reel | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | UFM-3 | UFM-3 | - |
| Technology | Si | Si | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Configuration | Single | Single | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Pd Power Dissipation | 800 mW | 800 mW | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Id Continuous Drain Current | - 1.7 A | - 1.7 A | - |
| Vds Drain Source Breakdown Voltage | - 20 V | - 20 V | - |
| Rds On Drain Source Resistance | 189 mOhms | 189 mOhms | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Forward Transconductance Min | 2.7 S / 1.3 S | 2.7 S / 1.3 S | - |
| Channel Mode | Enhancement | Enhancement | - |