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| PartNumber | SSR1N60BTM_WS | SSR1N60BTM(WS) | SSR1N60BTM-WS |
| Description | IGBT Transistors MOSFET 600V 0.9A 12Ohm N-Channel | MOSFET N-CH 600V 0.9A DPAK | |
| Manufacturer | Fairchild Semiconductor | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Packaging | Reel | - | - |
| Unit Weight | 0.000557 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 27 ns | - | - |
| Rise Time | 21 ns | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Id Continuous Drain Current | 900 mA | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V to 4 V | - | - |
| Rds On Drain Source Resistance | 11.5 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 13 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Qg Gate Charge | 4.8 nC | - | - |
| Channel Mode | Enhancement | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| SSR1N60BTM_WS | IGBT Transistors MOSFET 600V 0.9A 12Ohm N-Channel | ||
| SSR1N60BTM(WS) | ブランドニューオリジナル | ||
ON Semiconductor |
SSR1N60BTM-WS | MOSFET N-CH 600V 0.9A DPAK |