STD22N

STD22NF06AG vs STD22NM20NT4 vs STD22NM20N

 
PartNumberSTD22NF06AGSTD22NM20NT4STD22NM20N
DescriptionMOSFETMOSFET N-CHANNEL MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronicsST
Product CategoryMOSFETMOSFETFETs - Single
TechnologySiSiMOSFET (Metal Oxide)
QualificationAEC-Q101--
SeriesSTD22NF06AGSTD22NM20MDmesh II
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
RoHS-Y-
Mounting Style-SMD/SMT-
Package / Case-TO-252-3TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Channels-1 Channel-
Transistor Polarity-N-Channel-
Vds Drain Source Breakdown Voltage-200 V-
Id Continuous Drain Current-22 A-
Rds On Drain Source Resistance-105 mOhms-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 65 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-100 W-
Configuration-Single-
Channel Mode-Enhancement-
Packaging-ReelCut Tape (CT)
Height-2.4 mm-
Length-6.6 mm-
Transistor Type-1 N-Channel-
Width-6.2 mm-
Forward Transconductance Min-8 S-
Fall Time-11 ns-
Rise Time-15 ns-
Typical Turn Off Delay Time-40 ns-
Typical Turn On Delay Time-40 ns-
Unit Weight-0.139332 oz-
Part Status--Obsolete
FET Type--N-Channel
Drain to Source Voltage (Vdss)--200V
Current Continuous Drain (Id) @ 25°C--22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)--10V
Vgs(th) (Max) @ Id--5V @ 250A
Gate Charge (Qg) (Max) @ Vgs--50nC @ 10V
Vgs (Max)--±20V
Input Capacitance (Ciss) (Max) @ Vds--800pF @ 25V
FET Feature---
Power Dissipation (Max)--100W (Tc)
Rds On (Max) @ Id, Vgs--105 mOhm @ 11A, 10V
Operating Temperature---65°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
メーカー モデル 説明 RFQ
STMicroelectronics
STMicroelectronics
STD22NF06AG MOSFET
STD22NM20NT4 MOSFET N-CHANNEL MOSFET
STD22NM20NT4 MOSFET N-CH 200V 22A DPAK
STD22NM20N ブランドニューオリジナル
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