STD28

STD2805T4 vs STD28P3LLH6AG

 
PartNumberSTD2805T4STD28P3LLH6AG
DescriptionBipolar Transistors - BJT LV fast-switching PNP power transMOSFET Automotive-grade P-channel -30 V, 0.027 Ohm typ., -12 A, STripFET H6 Power MOSFET in a DPAK package
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryBipolar Transistors - BJTMOSFET
RoHSYY
Mounting StyleSMD/SMTSMD/SMT
Package / CaseDPAK-3TO-252-3
Transistor PolarityPNPP-Channel
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max60 V-
Collector Base Voltage VCBO60 V-
Emitter Base Voltage VEBO6 V-
Maximum DC Collector Current5 A-
Gain Bandwidth Product fT150 MHz-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C
SeriesSTD2805STD28P3LLH6AG
Height2.4 mm (Max)-
Length6.6 mm (Max)-
PackagingReelReel
Width6.2 mm (Max)-
BrandSTMicroelectronicsSTMicroelectronics
DC Collector/Base Gain hfe Min200-
Pd Power Dissipation15000 mW33 W
Product TypeBJTs - Bipolar TransistorsMOSFET
Factory Pack Quantity25002500
SubcategoryTransistorsMOSFETs
Unit Weight0.009185 oz0.012346 oz
Technology-Si
Number of Channels-1 Channel
Vds Drain Source Breakdown Voltage-30 V
Id Continuous Drain Current-12 A
Rds On Drain Source Resistance-27 mOhms
Vgs th Gate Source Threshold Voltage-1 V
Vgs Gate Source Voltage-18 V
Qg Gate Charge-29 nC
Channel Mode-Enhancement
Qualification-AEC-Q101
Tradename-STripFET
Transistor Type-1 P-Channel
Forward Transconductance Min--
Fall Time-6.9 ns
Rise Time-7.9 ns
Typical Turn Off Delay Time-41.5 ns
Typical Turn On Delay Time-10 ns
メーカー モデル 説明 RFQ
STMicroelectronics
STMicroelectronics
STD2805T4 Bipolar Transistors - BJT LV fast-switching PNP power trans
STD28P3LLH6AG MOSFET Automotive-grade P-channel -30 V, 0.027 Ohm typ., -12 A, STripFET H6 Power MOSFET in a DPAK package
STD2805T4 Bipolar Transistors - BJT LV fast-switching PNP power trans
STD28P3LLH6AG MOSFET P-CH 30V 12A
STD2805 ブランドニューオリジナル
STD2805-1 ブランドニューオリジナル
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