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| PartNumber | STF11N65M5 | STF11N65M2 |
| Description | MOSFET N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS | MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V |
| Id Continuous Drain Current | 9 A | 7 A |
| Rds On Drain Source Resistance | 480 mOhms | 670 mOhms |
| Pd Power Dissipation | 85 W | 25 W |
| Configuration | Single | Single |
| Tradename | MDmesh | MDmesh II Plus |
| Packaging | Tube | Tube |
| Series | STF11N65M5 | STF11N65M2 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.011640 oz | 0.011640 oz |
| Vgs th Gate Source Threshold Voltage | - | 3 V |
| Vgs Gate Source Voltage | - | 25 V |
| Qg Gate Charge | - | 12.5 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Product | - | Power MOSFET |
| Fall Time | - | 15 ns |
| Rise Time | - | 7.5 ns |
| Typical Turn Off Delay Time | - | 26 ns |
| Typical Turn On Delay Time | - | 9.5 ns |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
STMicroelectronics |
STF11N65M5 | MOSFET N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS | |
| STF11N65M2 | MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package | ||
| STF11N65M2 | Darlington Transistors MOSFET POWER MOSFET | ||
| STF11N65M5 | MOSFET N CH 650V 9A TO-220FP | ||
| STF11N65M2(040Y) | ブランドニューオリジナル | ||
| STF11N65M2(045Y) | ブランドニューオリジナル |