 |  |  | |
| PartNumber | STGD10HF60KD | STGD10NC60HT4 | STGD10NC60HDT4 |
| Description | IGBT Transistors Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode | IGBT Transistors N Ch 10A 600V | IGBT Transistors 600 Volt 10 Amp |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | DPAK-3 | DPAK-3 | DPAK-3 |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 2.75 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 18 A | - | - |
| Pd Power Dissipation | 62.5 W | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Series | STGD10HF60KD | STGD10NC60H | STGD10NC60HD |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | Reel |
| Continuous Collector Current Ic Max | 10 A | 20 A | 20 A |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.012346 oz | 0.012346 oz | 0.012346 oz |
| Height | - | 2.4 mm | 2.4 mm |
| Length | - | 6.6 mm | 6.6 mm |
| Width | - | 6.2 mm | 6.2 mm |
| Tradename | - | PowerMESH | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
STMicroelectronics |
STGD10NC60KDT4 | IGBT Transistors N Ch 600V 10A | |
| STGD18N40LZT4 | IGBT Transistors EAS 180 mJ-400 V clamped IGBT | ||
| STGD10HF60KD | IGBT Transistors Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode | ||
| STGD14NC60KT4 | IGBT Transistors N-channel MOSFET | ||
| STGD10NC60HT4 | IGBT Transistors N Ch 10A 600V | ||
| STGD19N40LZ | IGBT Transistors Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ | ||
| STGD10NC60KT4 | IGBT Transistors IGBT | ||
| STGD18N40LZ-1 | IGBT Transistors EAS 180 mJ-400 V clamped IGBT | ||
| STGD10NC60HDT4 | IGBT Transistors 600 Volt 10 Amp | ||
| STGD10NC60HDT4 | IGBT Transistors 600 Volt 10 Amp | ||
| STGD18N40LZ-1 | IGBT Transistors EAS 180 mJ-400 V clamped IGBT | ||
| STGD14NC60KT4 | IGBT Transistors N-channel MOSFET | ||
| STGD10HF60KD | IGBT Transistors IGBT & Power Bipola | ||
| STGD19N40LZ | IGBT Transistors IGBT & Power Bipola | ||
| STGD18N40LZT4 | IGBT Transistors EAS 180 mJ-400 V clamped IGBT | ||
| STGD10NC60KDT4 | IGBT Transistors N Ch 600V 10A | ||
| STGD10NC60HT4 | IGBT 600V 20A 60W DPAK | ||
| STGD10NC60SDT4 | IGBT 600V 18A 60W DPAK | ||
| STGD1100LT1G | MOSFET NFET SC74 20V 3.3A 55MOHM | ||
| STGD18N40LZT4-CUT TAPE | ブランドニューオリジナル | ||
| STGD19N40LZ-CUT TAPE | ブランドニューオリジナル | ||
| STGD10N40LZ | ブランドニューオリジナル | ||
| STGD10N60HDT4 | ブランドニューオリジナル | ||
| STGD10NC60H | ブランドニューオリジナル | ||
| STGD10NC60HD | ブランドニューオリジナル | ||
| STGD10NC60K | ブランドニューオリジナル | ||
| STGD10NC60KD | ブランドニューオリジナル | ||
| STGD1258 | ブランドニューオリジナル | ||
| STGD14NC60K | ブランドニューオリジナル | ||
| STGD14NC60K T4 | ブランドニューオリジナル | ||
| STGD18N40LZ | 360V 30A 150W TO252 | ||
| STGD18N40LZ GD18N40LZ | ブランドニューオリジナル | ||
| STGD18N40LZT | ブランドニューオリジナル | ||
ON Semiconductor |
STGD1100LT1G | MOSFET N-CH 20V 3.3A SC74 |