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| PartNumber | STGP10H60DF | STGP10M65DF2 | STGP100N30 |
| Description | IGBT Transistors Trench gate H series 600V 10A HiSpd | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss | IGBT Transistors 330volt 90 Amp |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-220-3 | - | TO-220-3 |
| Mounting Style | Through Hole | - | Through Hole |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 600 V | - | 330 V |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | 20 V |
| Continuous Collector Current at 25 C | 20 A | - | - |
| Pd Power Dissipation | 115 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 150 C |
| Series | STGP10H60DF | STGP10M65DF2 | STGP100N30 |
| Packaging | Tube | Tube | Reel |
| Continuous Collector Current Ic Max | 10 A | - | 90 A |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 nA | - | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.211644 oz | 0.070548 oz | 0.211644 oz |
| Height | - | - | 9.15 mm |
| Length | - | - | 10.4 mm |
| Width | - | - | 4.6 mm |