STGW25

STGW25M120DF3 vs STGW25H120F2 vs STGW25H120DF2

 
PartNumberSTGW25M120DF3STGW25H120F2STGW25H120DF2
DescriptionIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low lossIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speedIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-247-3TO-247-3TO-247-3
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max1200 V1200 V1200 V
Collector Emitter Saturation Voltage1.85 V2.1 V2.1 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C50 A50 A50 A
Pd Power Dissipation326 W375 W375 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
SeriesSTGW25M120DF3STGW25H120F2STGW25H120DF2
PackagingTubeTubeTube
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current250 nA250 nA250 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity600600600
SubcategoryIGBTsIGBTsIGBTs
Unit Weight1.340411 oz1.340411 oz1.340411 oz
Continuous Collector Current Ic Max-25 A25 A
メーカー モデル 説明 RFQ
STMicroelectronics
STMicroelectronics
STGW25M120DF3 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
STGW25H120F2 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
STGW25H120DF2 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
STGW25S120DF3 IGBT Transistors IGBT & Power Bipolar
STGW25M120DF3 IGBT 1200V 50A 375W
STGW25H120DF2 IGBT Transistors IGBT & Power Bipola
STGW25H120F2 IGBT H-SERIES 1200V 25A TO-247
STGW25H120DF ブランドニューオリジナル
STGW25H120F ブランドニューオリジナル
STGW25N120DF2 ブランドニューオリジナル
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