 |  | | |
| PartNumber | STGWT40V60DF | STGWT40V60DF-F | STGWT40V60DF GWT40V60DF |
| Description | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | ||
| Manufacturer | STMicroelectronics | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-3P | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2.35 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 80 A | - | - |
| Pd Power Dissipation | 283 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | STGWT40V60DF | - | - |
| Packaging | Tube | - | - |
| Brand | STMicroelectronics | - | - |
| Gate Emitter Leakage Current | 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 300 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.238311 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
STMicroelectronics |
STGWT40V60DF | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | |
| STGWT40V60DLF | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | ||
| STGWT40V60DF | IGBT 600V 80A 283W TO3P-3 | ||
| STGWT40V60DF-F | ブランドニューオリジナル | ||
| STGWT40V60DF GWT40V60DF | ブランドニューオリジナル |