STGWT8

STGWT80H65DFB vs STGWT80V60DF vs STGWT80H65FB

 
PartNumberSTGWT80H65DFBSTGWT80V60DFSTGWT80H65FB
DescriptionIGBT Transistors Trench gate H series 650V 80A HiSpdIGBT Transistors Trench gte FieldStop IGBT 600V 80AIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-3PTO-3PTO-3P
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max650 V600 V650 V
Collector Emitter Saturation Voltage1.6 V1.85 V1.6 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C120 A120 A120 A
Pd Power Dissipation469 W469 W469 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
SeriesSTGWT80H65DFBSTGWT80V60DFSTGWT80H65FB
PackagingTubeTubeTube
Continuous Collector Current Ic Max80 A80 A80 A
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Gate Emitter Leakage Current250 nA250 nA250 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity300300300
SubcategoryIGBTsIGBTsIGBTs
Unit Weight0.238311 oz0.238311 oz0.238311 oz
メーカー モデル 説明 RFQ
STMicroelectronics
STMicroelectronics
STGWT80H65DFB IGBT Transistors Trench gate H series 650V 80A HiSpd
STGWT80V60F IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
STGWT80V60DF IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65FB IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
STGWT80V60DF IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65DFB IGBT 650V 120A 469W TO3P-3L
STGWT80V60F IGBT Transistors IGBT & Power Bipola
STGWT80H65FB IGBT Transistors IGBT & Power Bipola
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