 | | | |
| PartNumber | STL130N6F7 | STL130N8F7 | STL135N8F7AG |
| Description | MOSFET N-channel 60 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | MOSFET N-CH 80V 4 mOhm 24A STripFET VII | MOSFET Automotive-grade N-channel 80 V, 3.15 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | N |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerFLAT-5x6-8 | PowerFLAT-5x6-8 | PowerFLAT-5x6-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 80 V | 80 V |
| Id Continuous Drain Current | 130 A | 120 A | 130 A |
| Rds On Drain Source Resistance | 3.5 mOhms | 3.6 mOhms | 3.15 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
| Qg Gate Charge | 42 nC | 96 nC | 103 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 125 W | 135 W | 135 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | STripFET | STripFET | STripFET |
| Packaging | Reel | Reel | Reel |
| Series | STL130N6F7 | STL130N8F7 | STL135N8F7AG |
| Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel Power MOSFET | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 24 ns | 44 ns | 30 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 44 ns | 51 ns | 28 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 62 ns | 82 ns | 73 ns |
| Typical Turn On Delay Time | 24 ns | 26 ns | 30 ns |
| Unit Weight | 0.002434 oz | - | - |
| Qualification | - | - | AEC-Q101 |
| Forward Transconductance Min | - | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
STMicroelectronics |
STL13N60DM2 | MOSFET N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6 HV package | |
| STL130N6F7 | MOSFET N-channel 60 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | ||
| STL13N65M2 | MOSFET N-channel 650 V, 0.365 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package | ||
| STL13N60M6 | MOSFET | ||
| STL13N60M2 | MOSFET N-channel 600 V, 0.39 Ohm typ., 7 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package | ||
| STL13DP10F6 | MOSFET Dual P-channel 100 V, 0.136 Ohm typ., 3.3 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 double island | ||
| STL130N8F7 | MOSFET N-CH 80V 4 mOhm 24A STripFET VII | ||
| STL13NM60N | MOSFET N-channel 600 V 0.3 20 Ohm 10A MDmesh II | ||
| STL135N8F7AG | MOSFET Automotive-grade N-channel 80 V, 3.15 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | ||
| STL13N65M2 | RF Bipolar Transistors MOSFET N-channel 650 V, 0.365 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package | ||
| STL13N60DM2 | N-CHANNEL 600 V, 0.350 OHM TYP., | ||
| STL13N60M2 | MOSFET N-CH 600V 7A PWRFLAT56 | ||
| STL130N6F7 | MOSFET N-CH 60V 130A F7 8PWRFLAT | ||
| STL130N8F7 | MOSFET N-CH 80V POWERFLAT5X6 | ||
| STL135N8F7AG | MOSFET N-CH 80V 130A | ||
| STL13DP10F6 | MOSFET 2P-CH 100V 13A PWRFLAT56 | ||
| STL13NM60N | MOSFET N-CH 600V 10A POWERFLAT | ||
| STL130N8F7-CUT TAPE | ブランドニューオリジナル | ||
| STL135N8F7AG-CUT TAPE | ブランドニューオリジナル | ||
| STL13N60M2-CUT TAPE | ブランドニューオリジナル | ||
| STL13N65M2-CUT TAPE | ブランドニューオリジナル | ||
| STL130/06-5.0-V-BLK | ブランドニューオリジナル | ||
| STL130/12-5.0-V | ブランドニューオリジナル | ||
| STL130/24-5.0V | ブランドニューオリジナル | ||
| STL13002 | ブランドニューオリジナル | ||
| STL13045.0VBLACK | ブランドニューオリジナル | ||
| STL1362ACLU | ブランドニューオリジナル | ||
| STL13N60M2/BKN | ブランドニューオリジナル |