 |  | | |
| PartNumber | STP15NM65N | STP15NM60ND | STP15NM60N |
| Description | MOSFET N-Channel 650V Pwr Mosfet | IGBT Transistors MOSFET N-channel 600V, 14A FDMesh II | MOSFET N-CH 600V 14A TO-220 |
| Manufacturer | STMicroelectronics | ST | ST |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 15.5 A | - | - |
| Rds On Drain Source Resistance | 270 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 9.15 mm | - | - |
| Length | 10.4 mm | - | - |
| Series | STP15NM65N | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.6 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 26 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 80 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Unit Weight | 0.011640 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
STMicroelectronics |
STP15NM65N | MOSFET N-Channel 650V Pwr Mosfet | |
| STP15NM60ND | IGBT Transistors MOSFET N-channel 600V, 14A FDMesh II | ||
| STP15NM65N | RF Bipolar Transistors MOSFET N-Channel 650V Pwr Mosfet | ||
| STP15NM60N | MOSFET N-CH 600V 14A TO-220 | ||
| STP15NM65N P15NM65N | ブランドニューオリジナル | ||
| STP15NM65N,15NM65N | ブランドニューオリジナル |