STS7PF

STS7PF30L vs STS7PF30 vs STS7PF30L(7P30L)

 
PartNumberSTS7PF30LSTS7PF30STS7PF30L(7P30L)
DescriptionMOSFET P-Ch 30 Volt 7 Amp
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOIC-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance21 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W--
ConfigurationSingleSingle Quad Drain Triple Source-
Channel ModeEnhancementEnhancement-
PackagingReelDigi-ReelR Alternate Packaging-
Height1.65 mm--
Length5 mm--
SeriesSTS7PF30LSTripFET II-
Transistor Type1 P-Channel1 P-Channel-
TypeMOSFET--
Width4 mm--
BrandSTMicroelectronics--
Fall Time23 ns23 ns-
Product TypeMOSFET--
Rise Time54 ns54 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns65 ns-
Typical Turn On Delay Time68 ns68 ns-
Unit Weight0.002998 oz0.002998 oz-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-MOSFET P-Channel, Metal Oxide-
Power Max-2.5W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-2600pF @ 25V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-7A (Tc)-
Rds On Max Id Vgs-21 mOhm @ 3.5A, 10V-
Vgs th Max Id-2.5V @ 250μA-
Gate Charge Qg Vgs-7nC @ 4.5V-
Pd Power Dissipation-2.5 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-7 A-
Vds Drain Source Breakdown Voltage-- 30 V-
Rds On Drain Source Resistance-21 mOhms-
メーカー モデル 説明 RFQ
STMicroelectronics
STMicroelectronics
STS7PF30L MOSFET P-Ch 30 Volt 7 Amp
STS7PF30L MOSFET P-CH 30V 7A 8-SOIC
STS7PF30 ブランドニューオリジナル
STS7PF30L(7P30L) ブランドニューオリジナル
STS7PF30L- ブランドニューオリジナル
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