| PartNumber | STW19NM50N | STW19NM60N | STW19NM65N |
| Description | MOSFET POWER MOSFET N-CH 500V 13A | MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM) | IGBT Transistors MOSFET N-channel 650V |
| Manufacturer | STMicroelectronics | STMicroelectronics | ST |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | 600 V | - |
| Id Continuous Drain Current | 14 A | 13 A | - |
| Rds On Drain Source Resistance | 250 mOhms | 260 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 3 V | - |
| Vgs Gate Source Voltage | 2 V | 25 V | - |
| Qg Gate Charge | 34 nC | 35 nC | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 110 W | 110 W | - |
| Configuration | Single | Single | - |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Tube | Tube | - |
| Series | STW19NM50N | STW19NM60N | - |
| Transistor Type | N-Channel | 1 N-Channel | - |
| Type | MDmesh II Power MOSFET | - | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 17 ns | 25 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 16 ns | 15 ns | - |
| Factory Pack Quantity | 600 | 600 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 61 ns | 55 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Channel Mode | - | Enhancement | - |
| Qualification | - | AEC-Q101 | - |