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| PartNumber | SUM90N08-6M2P-E3 | SUM90N08-6M2P | SUM90N08-6MP |
| Description | IGBT Transistors MOSFET 75V 90A 272W 6.2mohm @ 10V | ||
| Manufacturer | Vishay / Siliconix | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Series | SUM | - | - |
| Packaging | Reel | - | - |
| Unit Weight | 0.068654 oz | - | - |
| Package Case | TO-263-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 272 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 10 ns | - | - |
| Rise Time | 11 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 90 A | - | - |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Rds On Drain Source Resistance | 6.2 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 24 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Channel Mode | Enhancement | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay |
SUM90N08-6M2P-E3 | IGBT Transistors MOSFET 75V 90A 272W 6.2mohm @ 10V | |
| SUM90N08-6M2P | ブランドニューオリジナル | ||
| SUM90N08-6MP | ブランドニューオリジナル |