| PartNumber | SUP50010E-GE3 | SUP50N03-5M1P-GE3 | SUP50020EL-GE3 |
| Description | MOSFET 60V Vds; 20V Vgs TO-220AB | MOSFET RECOMMENDED ALT 78-SUP85N03-3M6P-GE3 | MOSFET 60V Vds 20V Vgs TO-220 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | 60 V |
| Id Continuous Drain Current | 150 A | - | 120 A |
| Rds On Drain Source Resistance | 2 mOhms | - | 2.3 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | - | 1.2 V |
| Vgs Gate Source Voltage | 20 V | - | 10 V |
| Qg Gate Charge | 212 nC | - | 126 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 375 W | - | 375 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Tube | Tube | Tube |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 120 S | - | 145 S |
| Fall Time | 13 ns | - | 11 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 112 ns | - | 20 ns |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50 ns | - | 55 ns |
| Typical Turn On Delay Time | 28 ns | - | 15 ns |
| Tradename | - | TrenchFET | TrenchFET |
| Height | - | 15.49 mm | 15.49 mm |
| Length | - | 10.41 mm | 10.41 mm |
| Series | - | SUP | SUP |
| Width | - | 4.7 mm | 4.7 mm |
| Unit Weight | - | 0.211644 oz | 0.081130 oz |