 |  |  | |
| PartNumber | SUP60020E-GE3 | SUP60030E-GE3 | SUP60030E |
| Description | MOSFET N-Channel 80 V (D-S) MOSFET | MOSFET 80V Vds 20V Vgs TO-220 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 150 A | 120 A | - |
| Rds On Drain Source Resistance | 2.8 mOhms | 2.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 151.2 nC | 141 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 375 W | 375 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Tube | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Fall Time | 15 ns | 14 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13 ns | 24 ns | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 50 ns | 34 ns | - |
| Typical Turn On Delay Time | 30 ns | 24 ns | - |
| Height | - | 15.49 mm | - |
| Length | - | 10.41 mm | - |
| Series | - | SUP | - |
| Width | - | 4.7 mm | - |
| Forward Transconductance Min | - | 82 S | - |
| Unit Weight | - | 0.081130 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SUP60020E-GE3 | MOSFET N-Channel 80 V (D-S) MOSFET | |
| SUP60030E-GE3 | MOSFET 80V Vds 20V Vgs TO-220 | ||
| SUP60030E | ブランドニューオリジナル | ||
Vishay |
SUP60030E-GE3 | MOSFET N-CH 80V 120A TO220AB |