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| PartNumber | SUP90142E-GE3 | SUP90140E-GE3 |
| Description | MOSFET 200V Vds 20V Vgs TO-220AB | MOSFET 200V Vds 20V Vgs TO-220 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V |
| Id Continuous Drain Current | 90 A | 90 A |
| Rds On Drain Source Resistance | 12.6 mOhms | 13.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 87 nC | 96 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 375 W | 375 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Height | 15.49 mm | - |
| Length | 10.41 mm | - |
| Series | SUP | SUP |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.7 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 63 S | 75 S |
| Fall Time | 80 ns | 80 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 125 ns | 112 ns |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 27 ns | 35 ns |
| Typical Turn On Delay Time | 14 ns | 13 ns |
| Unit Weight | 0.063493 oz | 0.063493 oz |
| Tradename | - | ThunderFET |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SUP90142E-GE3 | MOSFET 200V Vds 20V Vgs TO-220AB | |
| SUP90140E-GE3 | MOSFET 200V Vds 20V Vgs TO-220 | ||
Vishay |
SUP90140E-GE3 | MOSFET N-CH 200V 90A TO220AB | |
| SUP90142E-GE3 | MOSFET N-CH 200V 90A TO220AB | ||
| SUP90140EGE3 | Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |