TGF297 stock, TGF297, TGF2977-SM


PartNumber	TGF2977-SM	TGF2978-SM	TGF2977-SM-EVB
Description	RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB	RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB	RF Development Tools
Manufacturer	Qorvo	Qorvo	-
Product Category	RF JFET Transistors	RF JFET Transistors	-
RoHS	Y	Y	-
Transistor Type	HEMT	HEMT	-
Technology	GaN SiC	GaN SiC	-
Gain	13 dB	13 dB	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	32 V	32 V	-
Vgs Gate Source Breakdown Voltage	- 2.7 V	- 2.7 V	-
Id Continuous Drain Current	326 mA	326 mA	-
Output Power	6 W	6 W	-
Maximum Operating Temperature	+ 225 C	+ 225 C	-
Pd Power Dissipation	8.4 W	8.4 W	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	QFN-16	QFN-16	-
Packaging	Tray	Tray	-
Configuration	Single	Single	-
Height	0.203 mm	0.203 mm	-
Length	3 mm	3 mm	-
Operating Frequency	DC to 12 GHz	DC to 12 GHz	-
Type	GaN SiC HEMT	GaN SiC HEMT	-
Width	3 mm	3 mm	-
Brand	Qorvo	Qorvo	-
Number of Channels	1 Channel	1 Channel	-
Development Kit	TGF2977-SMEVB1	TGF2977-SMEVB1	-
Moisture Sensitive	Yes	Yes	-
Product Type	RF JFET Transistors	RF JFET Transistors	-
Factory Pack Quantity	50	50	-
Subcategory	Transistors	Transistors	-
Part # Aliases	1127257	1127257	-
Unit Weight	0.002014 oz	0.002014 oz	-

Search Part Number : "TGF297", Match & Start with "TGF297" - Total : 9

メーカー	モデル	説明
Qorvo	TGF2977-SM	RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
	TGF2978-SM	RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
	TGF2979-SM	RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
	TGF2978-SM	RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
	TGF2977-SM	RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
	TGF2979-SM	RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
	TGF2978-SM-EVB	RF Development Tools
	TGF2977-SM-EVB	RF Development Tools
	TGF2979-SM-EVB	RF Development Tools

TGF297