 |  | | |
| PartNumber | TK17E65W,S1X | TK17E65W | TK17E65W K17E65W |
| Description | MOSFET Power MOSFET N-Channel | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 17.3 A | - | - |
| Rds On Drain Source Resistance | 170 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 45 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 165 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Packaging | Tube | - | - |
| Height | 15.1 mm | - | - |
| Length | 10.16 mm | - | - |
| Series | TK17E65W | - | - |
| Width | 4.45 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 100 ns | - | - |
| Typical Turn On Delay Time | 50 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Toshiba |
TK17E65W,S1X | MOSFET Power MOSFET N-Channel | |
| TK17E65W | ブランドニューオリジナル | ||
| TK17E65W K17E65W | ブランドニューオリジナル | ||
| TK17E65W-S1X | ブランドニューオリジナル | ||
| TK17E65WS1X | ブランドニューオリジナル | ||
| TK17E65WS1XS | ブランドニューオリジナル | ||
| TK17E65WS1X-ND | ブランドニューオリジナル |