TK31E60

TK31E60X,S1X vs TK31E60W,S1VX

 
PartNumberTK31E60X,S1XTK31E60W,S1VX
DescriptionMOSFET DTMOSIV-High Speed 600V 88m (VGS=10V)MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
ManufacturerToshibaToshiba
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current7.7 A30.8 A
Rds On Drain Source Resistance73 mOhms73 mOhms
Vgs th Gate Source Threshold Voltage3.5 V3.7 V
Vgs Gate Source Voltage30 V30 V
Qg Gate Charge65 nC86 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation230 W230 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameDTMOSIVDTMOSIV
Height15.1 mm15.1 mm
Length10.16 mm10.16 mm
SeriesTK31E60XTK31E60W
Transistor Type1 N-Channel1 N-Channel
Width4.45 mm4.45 mm
BrandToshibaToshiba
Fall Time6 ns8.5 ns
Product TypeMOSFETMOSFET
Rise Time22 ns32 ns
Factory Pack Quantity5050
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time130 ns165 ns
Typical Turn On Delay Time55 ns70 ns
Unit Weight0.211644 oz0.211644 oz
メーカー モデル 説明 RFQ
Toshiba
Toshiba
TK31E60X,S1X MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V)
TK31E60W,S1VX MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
TK31E60W,S1VX Darlington Transistors MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
TK31E60X,S1X MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V)
TK31E60W,S1VX(S MOSFET DTMOS4 600V/31A TO220, BG
TK31E60W,S1VX(S) MOSFETs
TK31E60X,S1X(S) MOSFETs
TK31E60W Transistor: N-MOSFET, unipolar, 600V, 30.8A, 230W, TO220AB
TK31E60W,K31E60W ブランドニューオリジナル
TK31E60WS1VX Trans MOSFET N 600V 30.8A 3-Pin TO-220 Tube - Rail/Tube (Alt: TK31E60W,S1VX)
TK31E60WS1VX(S ブランドニューオリジナル
TK31E60X ブランドニューオリジナル
TK31E60X,S1X(S ブランドニューオリジナル
TK31E60WS1VX-ND ブランドニューオリジナル
TK31E60XS1X-ND ブランドニューオリジナル
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