TK31N60X,S

TK31N60X,S1F vs TK31N60X,S1F(S

 
PartNumberTK31N60X,S1FTK31N60X,S1F(S
DescriptionMOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)
ManufacturerToshiba-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-247-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage600 V-
Id Continuous Drain Current30.8 A-
Rds On Drain Source Resistance73 mOhms-
Vgs th Gate Source Threshold Voltage3.5 V-
Vgs Gate Source Voltage30 V-
Qg Gate Charge65 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation230 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameDTMOSIV-
PackagingReel-
Height20.95 mm-
Length15.94 mm-
SeriesTK31N60X-
Transistor Type1 N-Channel-
Width5.02 mm-
BrandToshiba-
Fall Time6 ns-
Product TypeMOSFET-
Rise Time22 ns-
Factory Pack Quantity30-
SubcategoryMOSFETs-
Typical Turn Off Delay Time130 ns-
Typical Turn On Delay Time55 ns-
Unit Weight1.340411 oz-
メーカー モデル 説明 RFQ
Toshiba
Toshiba
TK31N60X,S1F MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)
TK31N60X,S1F MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V)
TK31N60X,S1F(S ブランドニューオリジナル
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