TK72E12N1,S

TK72E12N1,S1X

 
PartNumberTK72E12N1,S1X
DescriptionMOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044
ManufacturerToshiba
Product CategoryMOSFET
RoHSY
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds Drain Source Breakdown Voltage120 V
Id Continuous Drain Current179 A
Rds On Drain Source Resistance4.4 mOhms
Vgs th Gate Source Threshold Voltage2 V
Vgs Gate Source Voltage10 V
Qg Gate Charge130 nC
Maximum Operating Temperature+ 150 C
Pd Power Dissipation255 W
ConfigurationSingle
Channel ModeEnhancement
Height15.1 mm
Length10.16 mm
SeriesTK72E12N1
Transistor Type1 N-Channel
Width4.45 mm
BrandToshiba
Fall Time37 ns
Product TypeMOSFET
Rise Time33 ns
Factory Pack Quantity50
SubcategoryMOSFETs
Typical Turn Off Delay Time120 ns
Typical Turn On Delay Time64 ns
Unit Weight0.211644 oz
メーカー モデル 説明 RFQ
Toshiba
Toshiba
TK72E12N1,S1X MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044
TK72E12N1,S1X X35 PB-F POWER MOSFET TRANSIST
Top