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| PartNumber | TPHR9003NL,L1Q |
| Description | MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V |
| Manufacturer | Toshiba |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | SOP-Advance-8 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V |
| Id Continuous Drain Current | 60 A |
| Rds On Drain Source Resistance | 1.1 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.3 V |
| Vgs Gate Source Voltage | 20 V |
| Qg Gate Charge | 74 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 78 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Packaging | Reel |
| Height | 0.95 mm |
| Length | 5 mm |
| Series | TPHR9003NL |
| Transistor Type | 1 N-Channel |
| Width | 5 mm |
| Brand | Toshiba |
| Product Type | MOSFET |
| Factory Pack Quantity | 5000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.030018 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Toshiba |
TPHR9003NL,L1Q | MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V | |
| TPHR9003NL,L1Q | MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V |