TSM2302C stock, TSM2302C, TSM2302CX RFG


PartNumber	TSM2302CX RFG	TSM2302CX	TSM2302CX RF
Description	MOSFET 20V N channel MOSFET	MOSFET 20V N channel MOSFET
Manufacturer	Taiwan Semiconductor	GP/TSC	-
Product Category	MOSFET	IC Chips	-
RoHS	Y	-	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-23-3	-	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	20 V	-	-
Id Continuous Drain Current	2.8 A	-	-
Rds On Drain Source Resistance	40 mOhms	-	-
Vgs th Gate Source Threshold Voltage	650 mV	-	-
Vgs Gate Source Voltage	4.5 V	-	-
Qg Gate Charge	5.4 nC	-	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	1.25 W	-	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Packaging	Reel	Reel	-
Product	Rectifiers	-	-
Transistor Type	1 N-Channel	1 N-Channel	-
Brand	Taiwan Semiconductor	-	-
Forward Transconductance Min	10 S	-	-
Fall Time	10 ns	7.56 ns	-
Product Type	MOSFET	-	-
Rise Time	36 ns	7.56 ns	-
Factory Pack Quantity	3000	-	-
Subcategory	MOSFETs	-	-
Typical Turn Off Delay Time	34 ns	16.61 ns	-
Typical Turn On Delay Time	12 ns	6.16 ns	-
Part Aliases	-	RFG	-
Unit Weight	-	0.050717 oz	-
Package Case	-	SOT-23-3	-
Pd Power Dissipation	-	900 mW	-
Vgs Gate Source Voltage	-	8 V	-
Id Continuous Drain Current	-	2.8 A	-
Vds Drain Source Breakdown Voltage	-	20 V	-
Vgs th Gate Source Threshold Voltage	-	0.95 V	-
Rds On Drain Source Resistance	-	65 mOhms	-

Search Part Number : "TSM2302C", Match & Start with "TSM2302C" - Total : 6

TSM2302C