TSM2323 stock, TSM2323, TSM2323CX RFG


PartNumber	TSM2323CX RFG	TSM2323CX	TSM2323CX RF
Description	MOSFET 20V P channel MOSFET	MOSFET 20V P channel MOSFET
Manufacturer	Taiwan Semiconductor	TSC	-
Product Category	MOSFET	IC Chips	-
RoHS	Y	-	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-23-3	-	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	P-Channel	P-Channel	-
Vds Drain Source Breakdown Voltage	20 V	-	-
Id Continuous Drain Current	4.7 A	-	-
Rds On Drain Source Resistance	31 mOhms	-	-
Vgs th Gate Source Threshold Voltage	400 mV	-	-
Vgs Gate Source Voltage	4.5 V	-	-
Qg Gate Charge	12.5 nC	-	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	1.25 W	-	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Packaging	Reel	Reel	-
Product	Rectifiers	-	-
Transistor Type	1 P-Channel	1 P-Channel	-
Brand	Taiwan Semiconductor	-	-
Forward Transconductance Min	16 S	-	-
Fall Time	48 ns	43 ns	-
Product Type	MOSFET	-	-
Rise Time	43 ns	43 ns	-
Factory Pack Quantity	3000	-	-
Subcategory	MOSFETs	-	-
Typical Turn Off Delay Time	71 ns	71 ns	-
Typical Turn On Delay Time	25 ns	25 ns	-
Part Aliases	-	RFG	-
Unit Weight	-	0.050717 oz	-
Package Case	-	SOT-23-3	-
Pd Power Dissipation	-	1.25 W	-
Vgs Gate Source Voltage	-	8 V	-
Id Continuous Drain Current	-	- 4.7 A	-
Vds Drain Source Breakdown Voltage	-	- 20 V	-
Vgs th Gate Source Threshold Voltage	-	- 1 V	-
Rds On Drain Source Resistance	-	39 mOhms	-

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TSM2323