| PartNumber | TSM2537CQ RFG | TSM250N02CX RFG | TSM250N02DCQ RFG |
| Description | MOSFET MOSFET Complementary N-Ch, 20V, 11.6A | MOSFET 20V, 5.8A, Single N- Channel Power MOSFET | MOSFET 20V Dual N-Channel MOSFET |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDFN22-6 | SOT-23-3 | TDFN-6 |
| Number of Channels | 2 Channel | 1 Channel | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 11.6 A, 9 A | 5.8 A | 5.8 A |
| Rds On Drain Source Resistance | 17 mOhms, 48 mOhms | 20 mOhms | 20 mOhms |
| Vgs th Gate Source Threshold Voltage | 500 mV, 450 mV | 400 mV | 400 mV |
| Vgs Gate Source Voltage | 4.5 V | 4.5 V | 4.5 V |
| Qg Gate Charge | 9.1 nC, 9.8 nC | 7.7 nC | 7.7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 6.25 W, 6.25 W | 1.56 W | 620 mW |
| Configuration | Dual | Single | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | N- and P-Channel Power MOSFET | 1 N-Channel | 2 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Forward Transconductance Min | 28 S, 15 S | 6.5 S | - |
| Fall Time | 30 ns, 68 ns | 7.6 ns | 7.6 ns |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 41 ns, 34 ns | 11.6 ns | 11.6 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns, 69 ns | 23.9 ns | 23.9 ns |
| Typical Turn On Delay Time | 8 ns, 10 ns | 4.1 ns | 4.1 ns |
| Unit Weight | - | 0.000282 oz | - |