TSM2NB60CH

TSM2NB60CH C5G vs TSM2NB60CH vs TSM2NB60CHC5G

 
PartNumberTSM2NB60CH C5GTSM2NB60CHTSM2NB60CHC5G
DescriptionMOSFET 600V 2A N Channel Mosfet
ManufacturerTaiwan Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current2 A--
Rds On Drain Source Resistance3.9 Ohms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge9.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation44 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Transistor Type1 N-Channel--
BrandTaiwan Semiconductor--
Forward Transconductance Min1.5 S--
Fall Time12.4 ns--
Product TypeMOSFET--
Rise Time9.8 ns--
Factory Pack Quantity1875--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17.4 ns--
Typical Turn On Delay Time9.1 ns--
Unit Weight0.012102 oz--
メーカー モデル 説明 RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM2NB60CH C5G MOSFET 600V 2A N Channel Mosfet
TSM2NB60CH C5G MOSFET 600V 2A N Channel Mosfet
TSM2NB60CH ブランドニューオリジナル
TSM2NB60CHC5G ブランドニューオリジナル
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