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TSM3457

TSM3457CX6 vs TSM3457 vs TSM3457CX6 RF

 
PartNumberTSM3457CX6TSM3457TSM3457CX6 RF
DescriptionMOSFET 30V P channel MOSFET
ManufacturerTaiwan SemiconductorTSCTSC
Product CategoryMOSFETIC ChipsIC Chips
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-26-6--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current5 A--
Rds On Drain Source Resistance50 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge9.52 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
Transistor Type1 P-Channel1 P-Channel-
TypeP-Channel--
BrandTaiwan Semiconductor--
Forward Transconductance Min10 S--
Fall Time3.87 ns--
Product TypeMOSFET--
Rise Time2.33 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22.53 ns--
Typical Turn On Delay Time10.8 ns--
Unit Weight0.000282 oz--
Package Case-SOT-26-6-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-- 5 A-
Vds Drain Source Breakdown Voltage-- 30 V-
Vgs th Gate Source Threshold Voltage-- 1.7 V-
Rds On Drain Source Resistance-60 mOhms-
Qg Gate Charge-9.5 nC-
メーカー モデル 説明 RFQ
Taiwan Semiconductor
Taiwan Semiconductor 		TSM3457CX6 RFG MOSFET 30V P channel Mosfet
TSM3457CX6 MOSFET 30V P channel MOSFET
TSM3457CX6 RFG Trans MOSFET P-CH 30V 5A
TSM3457CX6 MOSFET 30V P channel MOSFET
TSM3457 ブランドニューオリジナル
TSM3457CX6 RF ブランドニューオリジナル
TSM3457CX6RFG ブランドニューオリジナル
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